Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation

Effects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance

The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency perform...

Design of Heterostructures for High Efficiency Thermionic Emission

We use two heterostructure designs to improve the energy conversion efficiency of solidstate thermionic devices. The first method is to use a non-planar heterostructure with roughness in order of electron mean free path. This has some combined benefits of increased effective interface area, and reduced total internal reflection for the electron trajectories arriving at the interface. Monte Carl...

Majority Carrier Transistor Based on Voltage-Controlled Thermionic Emission

A new type of transistor is proposed based on gate-controlled charge injection in unipolar semiconductor structures. Its design has some similarity with the recently fabricated triangular barrier diodes but contains an additional input circuit which allows an independent control of the barrier height for thermionic emission. This circuit is provided by a MOS gate on the semiconductor surface. I...

The Relation between Temperature and Work Function in Thermionic Emission.

On momentum conservation and thermionic emission cooling